Difference between revisions of "280G F10"

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| 10/12/10
 
| 10/12/10
 
| Seokjoong
 
| Seokjoong
| [http://ieeexplore.ieee.org/xpls/abs_all.jsp?arnumber=5456943 A black box method for stability analysis of arbitrary SRAM cell structures (DATE2010)]
+
| [http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=05457179 On the Efficacy of Write-Assist Techniques in Low Voltage Nanoscale SRAMs (DATE2010)]
 
|-
 
|-
 
| 10/19/10
 
| 10/19/10

Revision as of 22:00, 7 October 2010

  • You may only take this class Pass/Fail. (If you do not, you will receive a non-passing grade.)
  • Each week, one person will present ONE paper. Everyone only presents one day.
  • You must select papers that are less than one year old and in top conferences.
  • You must think that the papers are VERY GOOD. To do this, you need to read the paper BEFORE you select it for the group. You may need to read several papers to find a good one.
  • You must post your papers one week prior to your presentation.


Date Presenter Paper
10/05/10 Xuchu An efficient phase detector connection structure for the skew synchronization system (DAC2010)
10/12/10 Seokjoong On the Efficacy of Write-Assist Techniques in Low Voltage Nanoscale SRAMs (DATE2010)
10/19/10 Ian
10/26/10 Andrew W. Hill
11/02/10 Jas Condley
11/09/10
11/16/10
11/23/10 Sheldon
11/30/10